1 GB/T 249-1989 半導體分立器件型號命名方法
The rule of type designation for discrete semiconductor devices
2 GB/T 4024-1983 半導體器件反向阻斷三極晶閘管的測試方法
Measuring methods for semiconductor device--Reverse blocking triode thyratron
3 GB/T 4586-1994 半導體器件 分立器件 第8部分: 場效應晶體管
Semiconductor devices--Discrete devices--Part 8: Field-effect transistors
4 GB/T 4587-1994 半導體分立器件和集成電路 第7部分: 雙極型晶體管
Semiconductor discrete devices and integrated circuits--Part 7: Bipolar transistors
5 GB/T 4589.1-1989 半導體器件 分立器件和集成電路總規(guī)范 （可供認證用）
Semiconductor devices-Generic specification for discrete devices and
integrated circuits
6 GB/T 4619-1996 液晶顯示器件測試方法
Measuring methods for liquid crystal display devices
7 GB/T 4654-1984 碳化硅、鋯英砂、陶瓷類紅外輻射加熱器通用技術(shù)條件
The general technical specifications on silicon carbide and zircon
ceramic infrared heater
8 GB/T 4799-1984 氣體激光器型號命名方法
The denominating method of type for gas lasers
9 GB/T 4931-1985 氦氖激光器系列型譜
The series and type spectrum for helium neon lasers
10 GB/T 4932-1985 二氧化碳激光器系列型譜
The series and type spectrum for carbon dioxide lasers
11 GB/T 4937-1995 半導體器件機械和氣候試驗方法
Mechanical and climatic test methods for semiconductor devices
12 GB/T 4938-1985 半導體分立器件接收和可靠性
Acceptance and reliability for discrete semiconductor devices
13 GB/T 4939-1985 普通整流管
Rectifier diodes for general purpose
14 GB/T 4940-1985 普通晶閘管
Triode thyristors for general purpose
15 GB/T 6218-1996 開關(guān)用雙極型晶體管空白詳細規(guī)范
Blank detail specification for bipolar transistors for switching applications
16 GB/T 6256-1986 工業(yè)加熱三極管空白詳細規(guī)范 （可供認證用）
Blank detail specification for industrial heating triodes
17 GB/T 6570-1986 微波二極管測試方法
Measuring methods for microwave diodes
18 GB/T 6571-1995 半導體器件 分立器件 第3部分:信號（包括開關(guān)）和調(diào)整二極管
Semiconductor devices--Discrete devices--Part 3: Signal（including switching）and regulator diodes
19 GB/T 6588-1986 通用信號和（或）開關(guān)半導體二極管空白詳細規(guī)范 （可供認證用）
Blank detail specification for general purpose signal and/or switching
semiconductor diodes
20 GB/T 6589-1986 電壓調(diào)整和電壓基準二極管 （包括溫度補嘗精密基準二極管）
空白詳細規(guī)范 （可供認證用）
Blank detail specification for volt age regulator diodes and voltage
reference diodes， excluding temperature compensated precision reference
diodes
21 GB/T 7577-1996 低頻放大管殼額定的雙極型晶體管空白詳細規(guī)范
Blank detail specification for case-rated bipolar transistors for
low-frequency amplification
22 GB/T 7581-1987 半導體分立器件外形尺寸
Dimensions of outlines for semiconductor discrete devices
23 GB/T 9436-1988 液晶顯示器件參數(shù)符號
Letter symbols of parameter for liquid crystal display devices
24 GB/T 11153-1989 激光小功率計性能檢測方法
Parameters testing method of laser power meter in low range
25 GB/T 12300-1990 功率晶體管安全工作區(qū)測試方法
Test methods of safe operating area for power transistors
26 GB/T 12560-1990 半導體器件 分立器件分規(guī)范 （可供認證用）
Semiconductor devices-Sectional specification for discrete devices
27 GB/T 12561-1990 發(fā)光二極管空白詳細規(guī)范 （可供認證用）
Blank detail specification for light emitting diodes
28 GB/T 12562-1990 PIN 二極管空白詳細規(guī)范 （可供認證用）
Blank detail specification for PIN diodes
29 GB/T 12848-1991 扭曲向列型液晶顯示器件總規(guī)范 （可供認證用）
Generic specification of twisted nematic liquid crystal display devices
30 GB/T 12849-1991 鐘、表用扭曲向列型液晶顯示器件空白詳細規(guī)范
（可供認證用）
Blank detail specification of twisted nematic liquid crystal
displays for watches
31 GB/T 12850-1991 計算器用扭曲向列型液晶顯示器件空白詳細規(guī)范
（可供認證用）
Blank detail specification of twisted nematic liquid crystal displays
for calculators
32 GB/T 12851-1991 儀器、儀表用扭曲向列型液晶顯示器件空白詳細規(guī)范
（可供認證用）
Blank detail specification of twisted nematic liquid crystal displays
for instruments
33 GB/T 13063-1991 電流調(diào)整和電流基準二極管空白詳細規(guī)范
Blank detail specification for current-regulator and current-reference
diodes 34 GB/T 13066-1991 單結(jié)晶體管空白詳細規(guī)范
Blank detail specification for unijunction transistors
35 GB/T 14078-1993 氦氖激光器技術(shù)條件
He-Ne laser specification
36 GB/T 14116-1993 彩色液晶顯示器件的光度和色度的測試方法
Photomentric and colorimetric methods of measurement of color liquid
crystal displays
37 GB/T 14117-1993 彩色液晶顯示器件空白詳細規(guī)范 （可供認證用）
Blank detail specification of color liquid crystal displays
38 GB/T 14863-1993 用柵控和非柵控二極管的電壓-電容關(guān)系測定硅外延層
中凈載流子濃度的標準方法
Standard test method for net carrier density in silicon epitaxial layers by
voltage-capacitance of gated and ungated diodes
39 GB/T 15137-1994 體效應二極管空白詳細規(guī)范
Blank detail specification for gunn diodes
40 GB/T 15167-1994 半導體激光光源總規(guī)范
General specification for light source of semiconductor lasers
41 GB/T 15177-1994 微波檢波、混頻二極管 空白詳細規(guī)范
Blank detail specification for microwave detectors and mixer diodes
42 GB/T 15178-1994 變?nèi)荻O管空白詳細規(guī)范
Blank detail specification for variable capacitance diodes
43 GB/T 15449-1995 管殼額定開關(guān)用場效應晶體管 空白詳細規(guī)范
Blank detail-specification for field-effect transistors for case-rated
swatching application
44 GB/T 15450-1995 硅雙柵場效應晶體管 空白詳細規(guī)范
Blank detail specification for silicon dual-gate field-effect transistors
45 GB/T 15529-1995 半導體發(fā)光數(shù)碼管空白詳細規(guī)范
Blank detail specification for LED numeric displays
46 GB/T 15649-1995 半導體激光二極管空白詳細規(guī)范
Blank detail specification for semiconductor laser diodes
47 GB/T 15651-1995 半導體器件 分立器件和集成電路 第5部分:光電子器件
Semiconductor devices--Discrete devices and integrated circuits--Part 5: Optoelectronic devices
48 GB/T 15655-1995 超扭曲向列型液晶顯示器件分規(guī)范
Sectional specification for super-twisted nematic liquid crystal display
devices 49 GB/T 15656-1995 超扭曲向列型液晶顯示器件 空白詳細規(guī)范
Blank detail specification of super-twisted nematic liquid crystal display
devices 50 GB/T 16468-1996 靜電感應晶體管系列型譜
Series programmes for static induction transistors
51 GB/T 4023-1997 半導體器件分立器件和集成電路 第2部分: 整流二極管
Semiconductor devices--Discrete devices and integrated circuits--Part 2: Rectifier diodes
52 GB/T 6351-1998 半導體器件 分立器件 第2部分: 整流二極管 首篇 100A以下
環(huán)境或管殼額定整流二極管（包括雪崩整流二極管）空白詳細規(guī)范
Semiconductor devices Discrete devices Part 2: Rectifier diodes Section One-Blank detail specification for rectifier diodes（including avalanche recti-fier diodes）1， ambient and case-rated，up to 100A
53 GB/T 6352-1998 半導體器件 分立器件 第6部分: 閘流晶體管 首篇 100A以下
環(huán)境或管殼額定反向阻斷三極閘流晶體管空白詳細規(guī)范 Semiconductor devices Discrete devices Part 6: Thyristors Section One-Blank detail specification for reverse blocking
triode thyristors，ambient or case-rated，up to 100A
54 GB/T 6590-1998 半導體器件 分立器件 第6部分: 閘流晶體管 第二篇 100A以下
環(huán)境或管殼額定的雙向三極閘流晶體管空白詳細規(guī)范 Semiconductor devices Discrete devices Part 6: Thyristors Section Two-Blank detail specification for bidirectional triode
thyristors（triacs），ambient or case-rated，up to 100A
55 GB/T 6217-1998 半導體器件 分立器件 第7部分: 雙極型晶體管 首篇 高低頻放
大環(huán)境額定的雙極型晶體管空白詳細規(guī)范 Semiconductor Devices Discrete
devices Part Bipolar transistors Section One-Blank detail specification
for ambient-rated bipolar transistors for low and high frequency
amplification 56 GB/T 7576-1998 半導體器件 分立器件 第7部分: 雙極型晶體管
第四篇 高頻放大管殼額定雙極型晶體管空白詳細規(guī)范 Semiconductor devices Discrete devices Part 7: Bipolar transistors Section Four-Blank detail specification for case-rated
bipolar transistors for high-frequency amplification
57 GB/T 6219-1998 半導體器件 分立器件 第8部分: 場效應晶體管 首篇 1GHz、
5W以下的單柵場效應晶體管 空白詳細規(guī)范 Semiconductor devices Discrete devices Part 8: Field-effect transistors Section One-Blank detail specification for
singe-gate field-effect transistors up to 5W and 1GHz
58 GB/T 17573-1998 半導體器件 分立器件和集成電路
第1部分: 總則 Semiconductor devices Discrete devices and integrated circuits
